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| AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .REFRACTORY/ .EMI .3: .LOW .I .OVERLAY .METAL/ .P G OLD METALLIZATION T TER SITE BALLASTED 1 VSWR CAPABILITY THERMAL RESISTANCE NPUT/OUTPUT MATCHING GEOMETRY C ERAMIC HERMETIC PACKAGE OUT = 105 W MIN. WITH 6.2 dB GAIN .400 x .500 2L SFL (S138) hermetically sealed ORDER CODE AM2931-110 BRANDING 2931-110 DESCRIPTION The AM2931-110 is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics). The AM2931-110 is supplied in the BIGPACTM Hermetic M etal/Ceramic package with i nternal Input/Output matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC 100C) 375 12 48 250 - 65 to +200 W A V C C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.40 C/W *Applies only to rated RF amplifier operation August 1992 1/4 AM2931-110 ELECTRICAL SPECIFICATIONS (Tcase = 25 C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE IC = 40mA IE = 8mA IC = 40mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10 VCE = 42V IC = 4A 55 3.5 55 -- 30 -- -- -- -- -- -- -- -- 30 -- V V V mA -- DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit POUT c GP Note: f = 2900 -- 3100MHz PIN = 25W f = 2900 -- 3100MHz PIN = 25W f = 2900 -- 3100MHz PIN = 25W = = 50 VCC = 42V VCC = 42V VCC = 42V 105 32 6.2 115 40 6.6 -- -- -- W % dB Pul se Widt h Duty Cycle Sec 10% TYPICAL PERFORMANCE TYPICAL BROADBAND PERFORMANCE PIN (W) 28 24 20 VCC - 42 Volts PW - 50 Sec DC - 10% TC - 25C PIN (W) 20 24 28 2/4 AM2931-110 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN TYPICAL COLLECTOR LOAD IMPEDANCE ZCL FREQ. L = 2.9 GHz M = 3.0 GHz H = 3.1 GHz ZIN () 15.0 - j 9.0 20.0 - j 9.5 13.5 - j 5.0 ZCL () 5.0 - j 1.0 4.8 + j 0.5 3.5 + j 2.5 PIN = 25 W VCC = 42 V Normalized to 50 ohms TEST CIRCUIT All dimensions are in inches. Substrate material: .025 thick AI2O3 (Er = 9.6) C1 C2 C3 C4 : : : : 1500 pF RF Feedthrough 1 F, CK06 CapacitorC 1 F, Tantalum Capacitor 100 F Electrolytic Capacitor, 63V C5 : 22 pF Chip Capacitor (bridge at location indicated) RFC1 : Gold Plated Nickel Strap, 0.060 Inch Wide, 0.005 Inch Thick, 0.290 Inch Long RFC2 : No. 26 Wire, 2 Turn .0.80 Inch I.D. 3/4 AM2931-110 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 |
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